EBL voltage (keV) 30 keV

Resist depth shown (nm) 1000 nm

EBL electrons (selected keV)

EBL 100 keV reference

1 µm resist depth

EBL spread at 1 µm

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EBL 100 keV at 1 µm

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Lateral spread σ(z) modelled using the Everhart–Hoff empirical electron scattering relation.